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  15gn03ca no. a1106-1/8 applications ? vhf, rf, mixer, osc, if ampli er features ? high cutoff frequency : f t =1.5ghz typ ? high gain : ? s21e ? 2 =13db typ (f=0.4ghz) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 20 v collector-to-emitter voltage v ceo 10 v emitter-to-base voltage v ebo 3v collector current i c 70 ma collector dissipation p c 200 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7013a-009 ordering number : ena1106a 72512 tkim/o2908ab msim tc-00001667 15gn03ca http:// semicon.sanyo.com/en/network sanyo semiconductors data sheet product & package information ? package : cp ? jeita, jedec : sc-59, to-236, sot-23, to-236ab ? minimum packing quantity : 3,000 pcs./reel packing type: tb marking electrical connection 1 : base 2 : emitter 3 : collector sanyo : cp 12 3 1.5 2.5 1.1 0.3 0.05 2.9 0.95 0.4 0.1 0.5 0.5 tb zu lot no. lot no. 15gn03ca-tb-e 3 2 1 npn epitaxial planar silicon transistor vhf high-frequency ampli er applications
15gn03ca no. a1106-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =10v, i e =0a 0.1 a emitter cutoff current i ebo v eb =2v, i c =0a 1 a dc current gain h fe v ce =5v, i c =10ma 100 180 gain-bandwidth product f t v ce =5v, i c =20ma 1.0 1.5 ghz output capacitance cob v cb =10v, f=1mhz 0.95 1.25 pf reverse transfer capacitance cre 0.65 pf forward transfer gain ? s21e ? 2 v ce =5v, i c =20ma, f=0.4ghz 10 13 db noise figure nf v ce =3v, i c =2ma, f=0.4ghz 1.6 db ordering information device package shipping memo 15gn03ca-tb-e cp 3,000pcs./reel pb free 0246810 0 10 20 30 40 50 60 70 80 90 100 collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce it08087 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 80 70 60 base-to-emitter voltage, v be -- v collector current, i c -- ma it08088 i c -- v be 5 7 100 2 3 7 1.0 2 3 5 h fe -- i c 1.0 23 57 10 23 57 100 1.0 23 57 10 23 57 100 collector current, i c -- ma dc current gain, h fe it08089 i b =0ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- ghz it08090 v ce =5v v ce =5v v ce =5v
15gn03ca no. a1106-3/8 4 6 8 10 12 14 1.0 23 57 23 57 10 100 0 20 40 60 80 100 120 140 160 0 200 250 it08095 150 100 50 collector dissipation, p c -- mw p c -- ta ? s21e ? 2 -- i c collector current, i c -- ma ambient temperature, ta -- c forward transfer gain, ? s21e ? 2 -- db it08093 collector current, i c -- ma noise figure, nf -- db it08094 nf -- i c 5 7 2 3 1.0 5 7 2 3 1.0 collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf it08092 cre -- v cb 0.1 23 5 5 7237 1.0 10 0.1 23 5 5 7237 1.0 10 cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf it08091 f=1mhz f=1mhz 1.0 10 357 2357 235 2 3 5 7 10 1.0 z s =50 z s =zsopt v ce =5v f=400mhz v ce =3v f=400mhz
15gn03ca no. a1106-4/8 s parameters (common emitter) v ce =5v, i c =1ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.918 -34.17 3.328 154.00 0.040 67.14 0.963 -9.32 200 0.816 -63.46 2.833 133.91 0.063 50.52 0.897 -15.61 300 0.719 -87.48 2.349 118.47 0.075 39.90 0.847 -19.59 400 0.650 -106.66 1.974 106.31 0.081 33.68 0.816 -22.72 500 0.603 -123.45 1.709 96.50 0.081 30.41 0.795 -25.65 600 0.579 -137.17 1.492 88.62 0.078 30.45 0.785 -28.56 700 0.562 -149.31 1.328 81.55 0.074 30.61 0.779 -31.42 800 0.557 -159.59 1.197 75.34 0.070 34.97 0.777 -34.68 900 0.557 -168.64 1.094 70.12 0.068 41.63 0.773 -38.02 1000 0.560 -176.38 1.003 65.13 0.066 50.34 0.773 -41.22 v ce =5v, i c =3ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.799 -55.14 7.483 141.00 0.033 59.88 0.886 -14.45 200 0.641 -93.26 5.412 118.03 0.047 44.28 0.773 -18.84 300 0.553 -118.80 4.036 104.19 0.050 40.23 0.719 -21.00 400 0.512 -136.73 3.182 94.58 0.052 40.73 0.693 -22.61 500 0.492 -150.89 2.627 86.95 0.055 44.74 0.683 -24.93 600 0.488 -161.99 2.244 80.86 0.056 49.28 0.677 -27.44 700 0.487 -171.08 1.958 75.25 0.059 55.44 0.675 -30.18 800 0.492 -178.68 1.749 70.37 0.063 62.40 0.675 -33.31 900 0.502 174.60 1.575 65.89 0.068 67.82 0.674 -36.39 1000 0.508 168.93 1.433 61.61 0.078 74.10 0.677 -39.25 v ce =5v, i c =5ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.703 -69.63 10.162 132.63 0.030 54.51 0.821 -16.94 200 0.550 -109.80 6.625 110.25 0.037 43.19 0.704 -19.31 300 0.490 -133.75 4.733 98.16 0.041 44.91 0.660 -20.36 400 0.464 -149.68 3.666 89.82 0.045 49.05 0.643 -21.83 500 0.458 -161.66 3.003 83.25 0.049 56.14 0.635 -23.97 600 0.460 -170.95 2.537 77.83 0.054 60.18 0.632 -26.46 700 0.465 -178.51 2.212 72.71 0.058 65.91 0.631 -29.05 800 0.472 174.93 1.962 68.10 0.067 71.03 0.633 -32.06 900 0.482 169.11 1.764 64.09 0.075 76.57 0.634 -35.26 1000 0.491 164.18 1.602 59.88 0.085 78.96 0.635 -38.26 v ce =5v, i c =10ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.568 -91.34 13.492 121.50 0.022 51.19 0.729 -18.79 200 0.463 -130.04 7.837 102.18 0.030 50.01 0.628 -18.37 300 0.435 -149.86 5.435 92.29 0.035 56.54 0.598 -18.84 400 0.427 -162.69 4.153 85.23 0.041 59.99 0.587 -20.20 500 0.431 -171.77 3.374 79.57 0.047 67.05 0.586 -22.36 600 0.438 -179.07 2.842 74.63 0.055 70.37 0.585 -24.64 700 0.446 174.71 2.460 69.90 0.062 74.51 0.587 -27.44 800 0.457 169.18 2.181 65.54 0.072 78.16 0.588 -30.30 900 0.469 164.67 1.954 61.61 0.080 80.51 0.592 -33.49 1000 0.482 160.55 1.775 57.60 0.092 82.60 0.596 -36.43
15gn03ca no. a1106-5/8 s parameters (common emitter) v ce =5v, i c =15ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.506 -103.02 14.843 116.40 0.020 52.22 0.680 -19.13 200 0.433 -139.11 8.300 98.87 0.027 55.27 0.595 -17.41 300 0.418 -156.74 5.691 89.86 0.032 60.47 0.571 -17.79 400 0.416 -167.49 4.336 83.26 0.040 65.01 0.567 -19.20 500 0.423 -175.59 3.518 77.72 0.047 70.77 0.564 -21.38 600 0.434 177.94 2.949 72.99 0.056 75.36 0.566 -23.76 700 0.441 172.60 2.558 68.36 0.064 77.18 0.566 -26.43 800 0.454 167.70 2.257 64.14 0.073 80.34 0.573 -29.43 900 0.468 163.21 2.026 60.20 0.084 82.23 0.576 -32.58 1000 0.478 159.35 1.833 56.21 0.094 82.82 0.579 -35.40 v ce =5v, i c =20ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.473 -110.94 15.555 113.24 0.018 48.75 0.651 -18.99 200 0.420 -144.96 8.504 96.80 0.025 55.46 0.577 -16.75 300 0.412 -160.51 5.806 88.35 0.032 64.32 0.556 -16.94 400 0.412 -170.47 4.415 81.97 0.040 69.43 0.553 -18.38 500 0.423 -177.81 3.567 76.52 0.047 73.49 0.552 -20.62 600 0.434 176.33 2.998 72.06 0.054 76.85 0.554 -23.22 700 0.443 171.32 2.597 67.40 0.064 79.43 0.555 -25.76 800 0.457 166.61 2.289 62.99 0.075 80.21 0.562 -28.77 900 0.470 162.56 2.044 58.98 0.084 82.61 0.567 -31.92 1000 0.484 159.03 1.849 54.97 0.095 83.62 0.572 -34.90 v ce =5v, i c =30ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.444 -121.15 16.032 109.59 0.018 56.45 0.620 -18.33 200 0.414 -151.46 8.590 94.42 0.023 58.54 0.558 -15.68 300 0.413 -164.93 5.826 86.42 0.031 69.33 0.543 -15.93 400 0.418 -173.75 4.420 80.00 0.040 71.41 0.541 -17.58 500 0.429 179.87 3.560 74.72 0.048 75.89 0.545 -19.95 600 0.442 174.95 2.980 69.97 0.056 78.14 0.546 -22.37 700 0.454 170.06 2.575 65.31 0.067 79.78 0.550 -25.11 800 0.467 165.62 2.268 61.02 0.077 81.97 0.556 -27.94 900 0.485 161.83 2.027 57.14 0.086 83.95 0.563 -31.50 1000 0.497 158.27 1.829 53.02 0.096 84.97 0.570 -34.37 v ce =5v, i c =50ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.436 -135.54 15.112 105.16 0.016 53.23 0.591 -16.61 200 0.431 -160.16 7.915 91.13 0.021 62.83 0.547 -14.06 300 0.439 -170.89 5.332 83.37 0.030 71.57 0.538 -15.05 400 0.447 -177.86 4.022 77.04 0.039 75.43 0.538 -16.92 500 0.462 176.77 3.231 71.43 0.046 77.82 0.543 -19.30 600 0.477 172.03 2.708 66.71 0.057 81.23 0.548 -22.35 700 0.490 167.59 2.318 61.92 0.065 82.45 0.553 -25.43 800 0.507 163.59 2.037 57.52 0.076 84.13 0.559 -28.69 900 0.523 159.90 1.813 53.42 0.087 86.15 0.566 -32.45 1000 0.539 156.32 1.629 49.36 0.099 87.07 0.573 -35.73
15gn03ca no. a1106-6/8 embossed taping speci cation 15gn03ca-tb-e
15gn03ca no. a1106-7/8 outline drawing land pattern example 15gn03ca-tb-e mass (g) unit 0.013 * for reference mm unit: mm 0.95 0.95 1.0 2.4 0.8
15gn03ca no. a1106-8/8 ps this catalog provides information as of july, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.


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